Search

x
中国物理学会期刊
Wang Chong, Zhao Meng-Di, Pei Jiu-Qing, He Yun-Long, Li Xiang-Dong, Zheng Xue-Feng, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue. Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatmentJ. Acta Physica Sinica, 2016, 65(3): 038501. DOI: 10.7498/aps.65.038501
Citation: Wang Chong, Zhao Meng-Di, Pei Jiu-Qing, He Yun-Long, Li Xiang-Dong, Zheng Xue-Feng, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue. Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatmentJ. Acta Physica Sinica, 2016, 65(3): 038501. DOI: 10.7498/aps.65.038501

Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment

CSTR: 32037.14.aps.65.038501
PDF
导出引用
Turn off MathJax
Article Contents

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return