Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate

Wang Guang-Xu; Chen Peng; Liu Jun-Lin; Wu Xiao-Ming; Mo Chun-Lan; Quan Zhi-Jue; Jiang Feng-Yi

doi:10.7498/aps.65.088501

Search

x

Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi. Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrateJ. Acta Physica Sinica, 2016, 65(8): 088501. DOI: 10.7498/aps.65.088501

Citation:

Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi. Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrateJ. Acta Physica Sinica, 2016, 65(8): 088501. DOI: 10.7498/aps.65.088501

Citation:

Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi. Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrateJ. Acta Physica Sinica, 2016, 65(8): 088501. DOI: 10.7498/aps.65.088501