Zhang Geng-Hong, Zhu Jia, Jiang Ge-Lei, Wang Biao, Zheng Yue. Atomic scale piezoelectricity and giant piezoelectric resistance effect in gallium nitride tunnel junctions under compressive strainJ. Acta Physica Sinica, 2016, 65(10): 107701. DOI: 10.7498/aps.65.107701
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Citation:
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Zhang Geng-Hong, Zhu Jia, Jiang Ge-Lei, Wang Biao, Zheng Yue. Atomic scale piezoelectricity and giant piezoelectric resistance effect in gallium nitride tunnel junctions under compressive strainJ. Acta Physica Sinica, 2016, 65(10): 107701. DOI: 10.7498/aps.65.107701
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Zhang Geng-Hong, Zhu Jia, Jiang Ge-Lei, Wang Biao, Zheng Yue. Atomic scale piezoelectricity and giant piezoelectric resistance effect in gallium nitride tunnel junctions under compressive strainJ. Acta Physica Sinica, 2016, 65(10): 107701. DOI: 10.7498/aps.65.107701
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Citation:
|
Zhang Geng-Hong, Zhu Jia, Jiang Ge-Lei, Wang Biao, Zheng Yue. Atomic scale piezoelectricity and giant piezoelectric resistance effect in gallium nitride tunnel junctions under compressive strainJ. Acta Physica Sinica, 2016, 65(10): 107701. DOI: 10.7498/aps.65.107701
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