Effects of annealing temperature and Ga content on properties of solution-processed InGaZnO thin film

Zhang Shi-Yu; Yu Zhi-Nong; Cheng Jin; Wu De-Long; Li Xu-Yang; Xue Wei

doi:10.7498/aps.65.128502

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Zhang Shi-Yu, Yu Zhi-Nong, Cheng Jin, Wu De-Long, Li Xu-Yang, Xue Wei. Effects of annealing temperature and Ga content on properties of solution-processed InGaZnO thin filmJ. Acta Physica Sinica, 2016, 65(12): 128502. DOI: 10.7498/aps.65.128502

Citation:

Zhang Shi-Yu, Yu Zhi-Nong, Cheng Jin, Wu De-Long, Li Xu-Yang, Xue Wei. Effects of annealing temperature and Ga content on properties of solution-processed InGaZnO thin filmJ. Acta Physica Sinica, 2016, 65(12): 128502. DOI: 10.7498/aps.65.128502

Citation:

Zhang Shi-Yu, Yu Zhi-Nong, Cheng Jin, Wu De-Long, Li Xu-Yang, Xue Wei. Effects of annealing temperature and Ga content on properties of solution-processed InGaZnO thin filmJ. Acta Physica Sinica, 2016, 65(12): 128502. DOI: 10.7498/aps.65.128502