Modification of memristor model with synaptic characteristics and mechanism analysis of the model's learning-experience behavior

Shao Nan; Zhang Sheng-Bing; Shao Shu-Yuan

doi:10.7498/aps.65.128503

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Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan. Modification of memristor model with synaptic characteristics and mechanism analysis of the model's learning-experience behaviorJ. Acta Physica Sinica, 2016, 65(12): 128503. DOI: 10.7498/aps.65.128503

Citation:

Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan. Modification of memristor model with synaptic characteristics and mechanism analysis of the model's learning-experience behaviorJ. Acta Physica Sinica, 2016, 65(12): 128503. DOI: 10.7498/aps.65.128503

Citation:

Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan. Modification of memristor model with synaptic characteristics and mechanism analysis of the model's learning-experience behaviorJ. Acta Physica Sinica, 2016, 65(12): 128503. DOI: 10.7498/aps.65.128503