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中国物理学会期刊
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Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong. High power microwave damage mechanism on high electron mobility transistorJ. Acta Physica Sinica, 2016, 65(16): 168501. DOI: 10.7498/aps.65.168501
Citation: Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong. High power microwave damage mechanism on high electron mobility transistorJ. Acta Physica Sinica, 2016, 65(16): 168501. DOI: 10.7498/aps.65.168501
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High power microwave damage mechanism on high electron mobility transistor

Acta Phys. Sin., 2016, 65(16): 168501.
DOI: 10.7498/aps.65.168501
CSTR: 32037.14.aps.65.168501
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