A new method to estimate the p-GaN carrier concentration by analyzing the reversed current-voltage characteristic curve of p-n+ junction diode

Zhou Mei; Li Chun-Yan; Zhao De-Gang

doi:10.7498/aps.65.197302

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Zhou Mei, Li Chun-Yan, Zhao De-Gang. A new method to estimate the p-GaN carrier concentration by analyzing the reversed current-voltage characteristic curve of p-n+ junction diodeJ. Acta Physica Sinica, 2016, 65(19): 197302. DOI: 10.7498/aps.65.197302

Citation:

Zhou Mei, Li Chun-Yan, Zhao De-Gang. A new method to estimate the p-GaN carrier concentration by analyzing the reversed current-voltage characteristic curve of p-n+ junction diodeJ. Acta Physica Sinica, 2016, 65(19): 197302. DOI: 10.7498/aps.65.197302

Citation:

Zhou Mei, Li Chun-Yan, Zhao De-Gang. A new method to estimate the p-GaN carrier concentration by analyzing the reversed current-voltage characteristic curve of p-n+ junction diodeJ. Acta Physica Sinica, 2016, 65(19): 197302. DOI: 10.7498/aps.65.197302