Frequency and bias dependent modeling of induced gate noise and cross-correlation noise in 40 nm metal-oxide-semiconductor field-effect transistors

Wang Jun; Wang Lin; Wang Dan-Dan

doi:10.7498/aps.65.237102

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Wang Jun, Wang Lin, Wang Dan-Dan. Frequency and bias dependent modeling of induced gate noise and cross-correlation noise in 40 nm metal-oxide-semiconductor field-effect transistorsJ. Acta Physica Sinica, 2016, 65(23): 237102. DOI: 10.7498/aps.65.237102

Citation:

Wang Jun, Wang Lin, Wang Dan-Dan. Frequency and bias dependent modeling of induced gate noise and cross-correlation noise in 40 nm metal-oxide-semiconductor field-effect transistorsJ. Acta Physica Sinica, 2016, 65(23): 237102. DOI: 10.7498/aps.65.237102

Citation:

Wang Jun, Wang Lin, Wang Dan-Dan. Frequency and bias dependent modeling of induced gate noise and cross-correlation noise in 40 nm metal-oxide-semiconductor field-effect transistorsJ. Acta Physica Sinica, 2016, 65(23): 237102. DOI: 10.7498/aps.65.237102