Failure analysis of GaN-based Light-emitting diode with hole vertical structure

Fu Min; Wen Shang-Sheng; Xia Yun-Yun; Xiang Chang-Ming; Ma Bing-Xu; Fang Fang

doi:10.7498/aps.66.048501

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Fu Min, Wen Shang-Sheng, Xia Yun-Yun, Xiang Chang-Ming, Ma Bing-Xu, Fang Fang. Failure analysis of GaN-based Light-emitting diode with hole vertical structureJ. Acta Physica Sinica, 2017, 66(4): 048501. DOI: 10.7498/aps.66.048501

Citation:

Fu Min, Wen Shang-Sheng, Xia Yun-Yun, Xiang Chang-Ming, Ma Bing-Xu, Fang Fang. Failure analysis of GaN-based Light-emitting diode with hole vertical structureJ. Acta Physica Sinica, 2017, 66(4): 048501. DOI: 10.7498/aps.66.048501

Citation:

Fu Min, Wen Shang-Sheng, Xia Yun-Yun, Xiang Chang-Ming, Ma Bing-Xu, Fang Fang. Failure analysis of GaN-based Light-emitting diode with hole vertical structureJ. Acta Physica Sinica, 2017, 66(4): 048501. DOI: 10.7498/aps.66.048501