Li Zhong-Hui, Luo Wei-Ke, Yang Qian-Kun, Li Liang, Zhou Jian-Jun, Dong Xun, Peng Da-Qing, Zhang Dong-Guo, Pan Lei, Li Chuan-Hao. Surface morphology improvement of homoepitaxial GaN grown on free-standing GaN substrate by metalorganic chemical vapor depositionJ. Acta Physica Sinica, 2017, 66(10): 106101. DOI: 10.7498/aps.66.106101
|
Citation:
|
Li Zhong-Hui, Luo Wei-Ke, Yang Qian-Kun, Li Liang, Zhou Jian-Jun, Dong Xun, Peng Da-Qing, Zhang Dong-Guo, Pan Lei, Li Chuan-Hao. Surface morphology improvement of homoepitaxial GaN grown on free-standing GaN substrate by metalorganic chemical vapor depositionJ. Acta Physica Sinica, 2017, 66(10): 106101. DOI: 10.7498/aps.66.106101
|
Li Zhong-Hui, Luo Wei-Ke, Yang Qian-Kun, Li Liang, Zhou Jian-Jun, Dong Xun, Peng Da-Qing, Zhang Dong-Guo, Pan Lei, Li Chuan-Hao. Surface morphology improvement of homoepitaxial GaN grown on free-standing GaN substrate by metalorganic chemical vapor depositionJ. Acta Physica Sinica, 2017, 66(10): 106101. DOI: 10.7498/aps.66.106101
|
Citation:
|
Li Zhong-Hui, Luo Wei-Ke, Yang Qian-Kun, Li Liang, Zhou Jian-Jun, Dong Xun, Peng Da-Qing, Zhang Dong-Guo, Pan Lei, Li Chuan-Hao. Surface morphology improvement of homoepitaxial GaN grown on free-standing GaN substrate by metalorganic chemical vapor depositionJ. Acta Physica Sinica, 2017, 66(10): 106101. DOI: 10.7498/aps.66.106101
|