Stress mechanism of Y1-xGdxBCO thin film with Gd substitution prepared by F-free metal organic deposition method

Chen Zhen-Ni; Liu Sheng-Li; Wang Hai-Yun; Cheng Jie

doi:10.7498/aps.66.156101

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Chen Zhen-Ni, Liu Sheng-Li, Wang Hai-Yun, Cheng Jie. Stress mechanism of Y1-xGdxBCO thin film with Gd substitution prepared by F-free metal organic deposition methodJ. Acta Physica Sinica, 2017, 66(15): 156101. DOI: 10.7498/aps.66.156101

Citation:

Chen Zhen-Ni, Liu Sheng-Li, Wang Hai-Yun, Cheng Jie. Stress mechanism of Y1-xGdxBCO thin film with Gd substitution prepared by F-free metal organic deposition methodJ. Acta Physica Sinica, 2017, 66(15): 156101. DOI: 10.7498/aps.66.156101

Citation:

Chen Zhen-Ni, Liu Sheng-Li, Wang Hai-Yun, Cheng Jie. Stress mechanism of Y1-xGdxBCO thin film with Gd substitution prepared by F-free metal organic deposition methodJ. Acta Physica Sinica, 2017, 66(15): 156101. DOI: 10.7498/aps.66.156101