Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diodeJ. Acta Physica Sinica, 2017, 66(15): 158501. DOI: 10.7498/aps.66.158501
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Citation:
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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diodeJ. Acta Physica Sinica, 2017, 66(15): 158501. DOI: 10.7498/aps.66.158501
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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diodeJ. Acta Physica Sinica, 2017, 66(15): 158501. DOI: 10.7498/aps.66.158501
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Citation:
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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diodeJ. Acta Physica Sinica, 2017, 66(15): 158501. DOI: 10.7498/aps.66.158501
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