Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer

Guo Hai-Jun; Duan Bao-Xing; Yuan Song; Xie Shen-Long; Yang Yin-Tang

doi:10.7498/aps.66.167301

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Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang. Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layerJ. Acta Physica Sinica, 2017, 66(16): 167301. DOI: 10.7498/aps.66.167301

Citation:

Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang. Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layerJ. Acta Physica Sinica, 2017, 66(16): 167301. DOI: 10.7498/aps.66.167301

Citation:

Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang. Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layerJ. Acta Physica Sinica, 2017, 66(16): 167301. DOI: 10.7498/aps.66.167301