Characteristics of H-terminated single crystalline diamond field effect transistors

Ren Ze-Yang; Zhang Jin-Feng; Zhang Jin-Cheng; Xu Sheng-Rui; Zhang Chun-Fu; Quan Ru-Dai; Hao Yue

doi:10.7498/aps.66.208101

Search

x

Ren Ze-Yang, Zhang Jin-Feng, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Quan Ru-Dai, Hao Yue. Characteristics of H-terminated single crystalline diamond field effect transistorsJ. Acta Physica Sinica, 2017, 66(20): 208101. DOI: 10.7498/aps.66.208101

Citation:

Ren Ze-Yang, Zhang Jin-Feng, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Quan Ru-Dai, Hao Yue. Characteristics of H-terminated single crystalline diamond field effect transistorsJ. Acta Physica Sinica, 2017, 66(20): 208101. DOI: 10.7498/aps.66.208101

Citation:

Ren Ze-Yang, Zhang Jin-Feng, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Quan Ru-Dai, Hao Yue. Characteristics of H-terminated single crystalline diamond field effect transistorsJ. Acta Physica Sinica, 2017, 66(20): 208101. DOI: 10.7498/aps.66.208101