Analyses of determination conditions of n-GaN dislocation density by triple-axis X-ray diffraction

He Ju-Sheng; Zhang Meng; Zou Ji-Jun; Pan Hua-Qing; Qi Wei-Jing; Li Ping

doi:10.7498/aps.66.216102

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He Ju-Sheng, Zhang Meng, Zou Ji-Jun, Pan Hua-Qing, Qi Wei-Jing, Li Ping. Analyses of determination conditions of n-GaN dislocation density by triple-axis X-ray diffractionJ. Acta Physica Sinica, 2017, 66(21): 216102. DOI: 10.7498/aps.66.216102

Citation:

He Ju-Sheng, Zhang Meng, Zou Ji-Jun, Pan Hua-Qing, Qi Wei-Jing, Li Ping. Analyses of determination conditions of n-GaN dislocation density by triple-axis X-ray diffractionJ. Acta Physica Sinica, 2017, 66(21): 216102. DOI: 10.7498/aps.66.216102

Citation:

He Ju-Sheng, Zhang Meng, Zou Ji-Jun, Pan Hua-Qing, Qi Wei-Jing, Li Ping. Analyses of determination conditions of n-GaN dislocation density by triple-axis X-ray diffractionJ. Acta Physica Sinica, 2017, 66(21): 216102. DOI: 10.7498/aps.66.216102