Design and fabrication of high electron mobility transistor devices with gallium nitride-based

Zhu Yan-Xu; Song Hui-Hui; Wang Yue-Hua; Li Lai-Long; Shi Dong

doi:10.7498/aps.66.247203

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Zhu Yan-Xu, Song Hui-Hui, Wang Yue-Hua, Li Lai-Long, Shi Dong. Design and fabrication of high electron mobility transistor devices with gallium nitride-basedJ. Acta Physica Sinica, 2017, 66(24): 247203. DOI: 10.7498/aps.66.247203

Citation:

Zhu Yan-Xu, Song Hui-Hui, Wang Yue-Hua, Li Lai-Long, Shi Dong. Design and fabrication of high electron mobility transistor devices with gallium nitride-basedJ. Acta Physica Sinica, 2017, 66(24): 247203. DOI: 10.7498/aps.66.247203

Citation:

Zhu Yan-Xu, Song Hui-Hui, Wang Yue-Hua, Li Lai-Long, Shi Dong. Design and fabrication of high electron mobility transistor devices with gallium nitride-basedJ. Acta Physica Sinica, 2017, 66(24): 247203. DOI: 10.7498/aps.66.247203