Lattice scattering in n-type Ge-on-Si based on the unique dual-valley transitions

Huang Shi-Hao; Xie Wen-Ming; Wang Han-Cong; Lin Guang-Yang; Wang Jia-Qi; Huang Wei; Li Cheng

doi:10.7498/aps.67.20171413

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Huang Shi-Hao, Xie Wen-Ming, Wang Han-Cong, Lin Guang-Yang, Wang Jia-Qi, Huang Wei, Li Cheng. Lattice scattering in n-type Ge-on-Si based on the unique dual-valley transitionsJ. Acta Physica Sinica, 2018, 67(4): 040501. DOI: 10.7498/aps.67.20171413

Citation:

Huang Shi-Hao, Xie Wen-Ming, Wang Han-Cong, Lin Guang-Yang, Wang Jia-Qi, Huang Wei, Li Cheng. Lattice scattering in n-type Ge-on-Si based on the unique dual-valley transitionsJ. Acta Physica Sinica, 2018, 67(4): 040501. DOI: 10.7498/aps.67.20171413

Citation:

Huang Shi-Hao, Xie Wen-Ming, Wang Han-Cong, Lin Guang-Yang, Wang Jia-Qi, Huang Wei, Li Cheng. Lattice scattering in n-type Ge-on-Si based on the unique dual-valley transitionsJ. Acta Physica Sinica, 2018, 67(4): 040501. DOI: 10.7498/aps.67.20171413