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中国物理学会期刊
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Li Jian-Jun. Design of active region for GaAsP/AlGaAs tensile strain quantum well laser diodes near 800 nm wavelengthJ. Acta Physica Sinica, 2018, 67(6): 067801. DOI: 10.7498/aps.67.20171816
Citation: Li Jian-Jun. Design of active region for GaAsP/AlGaAs tensile strain quantum well laser diodes near 800 nm wavelengthJ. Acta Physica Sinica, 2018, 67(6): 067801. DOI: 10.7498/aps.67.20171816
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Design of active region for GaAsP/AlGaAs tensile strain quantum well laser diodes near 800 nm wavelength

Acta Phys. Sin., 2018, 67(6): 067801.
DOI: 10.7498/aps.67.20171816
CSTR: 32037.14.aps.67.20171816
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