Floating gate effect in amorphous InGaZnO thin-film transistor

Qin Ting; Huang Sheng-Xiang; Liao Cong-Wei; Yu Tian-Bao; Luo Heng; Liu Sheng; Deng Lian-Wen

doi:10.7498/aps.67.20172325

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Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Luo Heng, Liu Sheng, Deng Lian-Wen. Floating gate effect in amorphous InGaZnO thin-film transistorJ. Acta Physica Sinica, 2018, 67(4): 047302. DOI: 10.7498/aps.67.20172325

Citation:

Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Luo Heng, Liu Sheng, Deng Lian-Wen. Floating gate effect in amorphous InGaZnO thin-film transistorJ. Acta Physica Sinica, 2018, 67(4): 047302. DOI: 10.7498/aps.67.20172325

Citation:

Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Luo Heng, Liu Sheng, Deng Lian-Wen. Floating gate effect in amorphous InGaZnO thin-film transistorJ. Acta Physica Sinica, 2018, 67(4): 047302. DOI: 10.7498/aps.67.20172325