Effect of transition metal element X (X=Mn, Fe, Co, and Ni) doping on performance of ZnO resistive memory

Guo Jia-Jun; Dong Jing-Yu; Kang Xin; Chen Wei; Zhao Xu

doi:10.7498/aps.67.20172459

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Guo Jia-Jun, Dong Jing-Yu, Kang Xin, Chen Wei, Zhao Xu. Effect of transition metal element X (X=Mn, Fe, Co, and Ni) doping on performance of ZnO resistive memoryJ. Acta Physica Sinica, 2018, 67(6): 063101. DOI: 10.7498/aps.67.20172459

Citation:

Guo Jia-Jun, Dong Jing-Yu, Kang Xin, Chen Wei, Zhao Xu. Effect of transition metal element X (X=Mn, Fe, Co, and Ni) doping on performance of ZnO resistive memoryJ. Acta Physica Sinica, 2018, 67(6): 063101. DOI: 10.7498/aps.67.20172459

Citation:

Guo Jia-Jun, Dong Jing-Yu, Kang Xin, Chen Wei, Zhao Xu. Effect of transition metal element X (X=Mn, Fe, Co, and Ni) doping on performance of ZnO resistive memoryJ. Acta Physica Sinica, 2018, 67(6): 063101. DOI: 10.7498/aps.67.20172459