Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Wang Zu-Jun, Liu Min-Bo, Liu Jing, Sheng Jiang-Kun, Dong Guan-Tao, Xue Yuan-Yuan. Radiation effect and degradation mechanism in 65 nm CMOS transistorJ. Acta Physica Sinica, 2018, 67(14): 146103. DOI: 10.7498/aps.67.20172542
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Citation:
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Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Wang Zu-Jun, Liu Min-Bo, Liu Jing, Sheng Jiang-Kun, Dong Guan-Tao, Xue Yuan-Yuan. Radiation effect and degradation mechanism in 65 nm CMOS transistorJ. Acta Physica Sinica, 2018, 67(14): 146103. DOI: 10.7498/aps.67.20172542
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Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Wang Zu-Jun, Liu Min-Bo, Liu Jing, Sheng Jiang-Kun, Dong Guan-Tao, Xue Yuan-Yuan. Radiation effect and degradation mechanism in 65 nm CMOS transistorJ. Acta Physica Sinica, 2018, 67(14): 146103. DOI: 10.7498/aps.67.20172542
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Citation:
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Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Wang Zu-Jun, Liu Min-Bo, Liu Jing, Sheng Jiang-Kun, Dong Guan-Tao, Xue Yuan-Yuan. Radiation effect and degradation mechanism in 65 nm CMOS transistorJ. Acta Physica Sinica, 2018, 67(14): 146103. DOI: 10.7498/aps.67.20172542
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