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中国物理学会期刊
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Shao Yan, Ding Shi-Jin. Effects of hydrogen impurities on performances and electrical reliabilities of indium-gallium-zinc oxide thin film transistorsJ. Acta Physica Sinica, 2018, 67(9): 098502. DOI: 10.7498/aps.67.20180074
Citation: Shao Yan, Ding Shi-Jin. Effects of hydrogen impurities on performances and electrical reliabilities of indium-gallium-zinc oxide thin film transistorsJ. Acta Physica Sinica, 2018, 67(9): 098502. DOI: 10.7498/aps.67.20180074
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Effects of hydrogen impurities on performances and electrical reliabilities of indium-gallium-zinc oxide thin film transistors

Acta Phys. Sin., 2018, 67(9): 098502.
DOI: 10.7498/aps.67.20180074
CSTR: 32037.14.aps.67.20180074
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