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中国物理学会期刊
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Yu Zhi-Qiang, Liu Min-Li, Lang Jian-Xun, Qian Kai, Zhang Chang-Hua. Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristorJ. Acta Physica Sinica, 2018, 67(15): 157302. DOI: 10.7498/aps.67.20180425
Citation: Yu Zhi-Qiang, Liu Min-Li, Lang Jian-Xun, Qian Kai, Zhang Chang-Hua. Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristorJ. Acta Physica Sinica, 2018, 67(15): 157302. DOI: 10.7498/aps.67.20180425
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Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristor

Acta Phys. Sin., 2018, 67(15): 157302.
DOI: 10.7498/aps.67.20180425
CSTR: 32037.14.aps.67.20180425
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