Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement

Zhou Xing-Ye; Lv Yuan-Jie; Tan Xin; Wang Yuan-Gang; Song Xu-Bo; He Ze-Zhao; Zhang Zhi-Rong; Liu Qing-Bin; Han Ting-Ting; Fang Yu-Long; Feng Zhi-Hong

doi:10.7498/aps.67.20180474

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Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong. Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurementJ. Acta Physica Sinica, 2018, 67(17): 178501. DOI: 10.7498/aps.67.20180474

Citation:

Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong. Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurementJ. Acta Physica Sinica, 2018, 67(17): 178501. DOI: 10.7498/aps.67.20180474

Citation:

Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong. Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurementJ. Acta Physica Sinica, 2018, 67(17): 178501. DOI: 10.7498/aps.67.20180474