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中国物理学会期刊
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Shen Jian-Xin, Shang Da-Shan, Sun Young. Fundamental circuit element and nonvolatile memory based on magnetoelectric effectJ. Acta Physica Sinica, 2018, 67(12): 127501. DOI: 10.7498/aps.67.20180712
Citation: Shen Jian-Xin, Shang Da-Shan, Sun Young. Fundamental circuit element and nonvolatile memory based on magnetoelectric effectJ. Acta Physica Sinica, 2018, 67(12): 127501. DOI: 10.7498/aps.67.20180712
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Fundamental circuit element and nonvolatile memory based on magnetoelectric effect

Acta Phys. Sin., 2018, 67(12): 127501.
DOI: 10.7498/aps.67.20180712
CSTR: 32037.14.aps.67.20180712
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