Capacitance scattering mechanism in lattice-matched In<sub>0.17</sub>Al<sub>0.83</sub>N/GaN heterojunction Schottky diodes

Ren Jian; Su Li-Na; Li Wen-Jia

doi:10.7498/aps.67.20181050

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Ren Jian, Su Li-Na, Li Wen-Jia. Capacitance scattering mechanism in lattice-matched In0.17Al0.83N/GaN heterojunction Schottky diodesJ. Acta Physica Sinica, 2018, 67(24): 247202. DOI: 10.7498/aps.67.20181050

Citation:

Ren Jian, Su Li-Na, Li Wen-Jia. Capacitance scattering mechanism in lattice-matched In0.17Al0.83N/GaN heterojunction Schottky diodesJ. Acta Physica Sinica, 2018, 67(24): 247202. DOI: 10.7498/aps.67.20181050

Citation:

Ren Jian, Su Li-Na, Li Wen-Jia. Capacitance scattering mechanism in lattice-matched In0.17Al0.83N/GaN heterojunction Schottky diodesJ. Acta Physica Sinica, 2018, 67(24): 247202. DOI: 10.7498/aps.67.20181050