Effect of layer variation on the electronic structure of stacked MoS2(1-x) Se2x alloy

Wang Wen-Jie; Kang Zhi-Lin; Song Qian; Wang Xin; Deng Jia-Jun; Ding Xun-Lei; Che Jian-Tao

doi:10.7498/aps.67.20181494

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Wang Wen-Jie, Kang Zhi-Lin, Song Qian, Wang Xin, Deng Jia-Jun, Ding Xun-Lei, Che Jian-Tao. Effect of layer variation on the electronic structure of stacked MoS2(1-x) Se2x alloyJ. Acta Physica Sinica, 2018, 67(24): 240601. DOI: 10.7498/aps.67.20181494

Citation:

Wang Wen-Jie, Kang Zhi-Lin, Song Qian, Wang Xin, Deng Jia-Jun, Ding Xun-Lei, Che Jian-Tao. Effect of layer variation on the electronic structure of stacked MoS2(1-x) Se2x alloyJ. Acta Physica Sinica, 2018, 67(24): 240601. DOI: 10.7498/aps.67.20181494

Citation:

Wang Wen-Jie, Kang Zhi-Lin, Song Qian, Wang Xin, Deng Jia-Jun, Ding Xun-Lei, Che Jian-Tao. Effect of layer variation on the electronic structure of stacked MoS2(1-x) Se2x alloyJ. Acta Physica Sinica, 2018, 67(24): 240601. DOI: 10.7498/aps.67.20181494