Molecular dynamics study of release mechanism of stress at Si/Ge interface on a nanoscale

Chen Xian; Zhang Jing; Tang Zhao-Huan

doi:10.7498/aps.68.20181530

Search

x

Chen Xian, Zhang Jing, Tang Zhao-Huan. Molecular dynamics study of release mechanism of stress at Si/Ge interface on a nanoscaleJ. Acta Physica Sinica, 2019, 68(2): 026801. DOI: 10.7498/aps.68.20181530

Citation:

Chen Xian, Zhang Jing, Tang Zhao-Huan. Molecular dynamics study of release mechanism of stress at Si/Ge interface on a nanoscaleJ. Acta Physica Sinica, 2019, 68(2): 026801. DOI: 10.7498/aps.68.20181530

Citation:

Chen Xian, Zhang Jing, Tang Zhao-Huan. Molecular dynamics study of release mechanism of stress at Si/Ge interface on a nanoscaleJ. Acta Physica Sinica, 2019, 68(2): 026801. DOI: 10.7498/aps.68.20181530