Total ionizing dose effects on innovative silicon-on-insulator static random access memory cell

Wang Shuo; Chang Yong-Wei; Chen Jing; Wang Ben-Yan; He Wei-Wei; Ge Hao

doi:10.7498/aps.68.20190405

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Wang Shuo, Chang Yong-Wei, Chen Jing, Wang Ben-Yan, He Wei-Wei, Ge Hao. Total ionizing dose effects on innovative silicon-on-insulator static random access memory cellJ. Acta Physica Sinica, 2019, 68(16): 168501. DOI: 10.7498/aps.68.20190405

Citation:

Wang Shuo, Chang Yong-Wei, Chen Jing, Wang Ben-Yan, He Wei-Wei, Ge Hao. Total ionizing dose effects on innovative silicon-on-insulator static random access memory cellJ. Acta Physica Sinica, 2019, 68(16): 168501. DOI: 10.7498/aps.68.20190405

Citation:

Wang Shuo, Chang Yong-Wei, Chen Jing, Wang Ben-Yan, He Wei-Wei, Ge Hao. Total ionizing dose effects on innovative silicon-on-insulator static random access memory cellJ. Acta Physica Sinica, 2019, 68(16): 168501. DOI: 10.7498/aps.68.20190405