Improved performance of Al/n<sup>+</sup>Ge Ohmic contact andGe n<sup>+</sup>/p diode by two-step annealing method

Wang Chen; Xu Yi-Hong; Li Cheng; Lin Hai-Jun; Zhao Ming-Jie

doi:10.7498/aps.68.20190699

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Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun, Zhao Ming-Jie. Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing methodJ. Acta Physica Sinica, 2019, 68(17): 178501. DOI: 10.7498/aps.68.20190699

Citation:

Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun, Zhao Ming-Jie. Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing methodJ. Acta Physica Sinica, 2019, 68(17): 178501. DOI: 10.7498/aps.68.20190699

Citation:

Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun, Zhao Ming-Jie. Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing methodJ. Acta Physica Sinica, 2019, 68(17): 178501. DOI: 10.7498/aps.68.20190699