Effects of p-layer hole concentration and thickness on performance of p-i-n InGaN homojunction solar cells

Pan Hong-Ying; Quan Zhi-Jue

doi:10.7498/aps.68.20191042

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Pan Hong-Ying, Quan Zhi-Jue. Effects of p-layer hole concentration and thickness on performance of p-i-n InGaN homojunction solar cellsJ. Acta Physica Sinica, 2019, 68(19): 196103. DOI: 10.7498/aps.68.20191042

Citation:

Pan Hong-Ying, Quan Zhi-Jue. Effects of p-layer hole concentration and thickness on performance of p-i-n InGaN homojunction solar cellsJ. Acta Physica Sinica, 2019, 68(19): 196103. DOI: 10.7498/aps.68.20191042

Citation:

Pan Hong-Ying, Quan Zhi-Jue. Effects of p-layer hole concentration and thickness on performance of p-i-n InGaN homojunction solar cellsJ. Acta Physica Sinica, 2019, 68(19): 196103. DOI: 10.7498/aps.68.20191042