Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor

Liu Yan-Li; Wang Wei; Dong Yan; Chen Dun-Jun; Zhang Rong; Zheng You-Dou

doi:10.7498/aps.68.20191153

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Liu Yan-Li, Wang Wei, Dong Yan, Chen Dun-Jun, Zhang Rong, Zheng You-Dou. Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistorJ. Acta Physica Sinica, 2019, 68(24): 247203. DOI: 10.7498/aps.68.20191153

Citation:

Liu Yan-Li, Wang Wei, Dong Yan, Chen Dun-Jun, Zhang Rong, Zheng You-Dou. Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistorJ. Acta Physica Sinica, 2019, 68(24): 247203. DOI: 10.7498/aps.68.20191153

Citation:

Liu Yan-Li, Wang Wei, Dong Yan, Chen Dun-Jun, Zhang Rong, Zheng You-Dou. Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistorJ. Acta Physica Sinica, 2019, 68(24): 247203. DOI: 10.7498/aps.68.20191153