Properties of vacancies and N-doping in monolayer g-ZnO: First-principles calculation and molecular orbital theory analysis

Huang Bing-Quan; Zhou Tie-Ge; Wu Dao-Xiong; Zhang Zhao-Fu; Li Bai-Kui

doi:10.7498/aps.68.20191258

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Huang Bing-Quan, Zhou Tie-Ge, Wu Dao-Xiong, Zhang Zhao-Fu, Li Bai-Kui. Properties of vacancies and N-doping in monolayer g-ZnO: First-principles calculation and molecular orbital theory analysisJ. Acta Physica Sinica, 2019, 68(24): 246301. DOI: 10.7498/aps.68.20191258

Citation:

Huang Bing-Quan, Zhou Tie-Ge, Wu Dao-Xiong, Zhang Zhao-Fu, Li Bai-Kui. Properties of vacancies and N-doping in monolayer g-ZnO: First-principles calculation and molecular orbital theory analysisJ. Acta Physica Sinica, 2019, 68(24): 246301. DOI: 10.7498/aps.68.20191258

Citation:

Huang Bing-Quan, Zhou Tie-Ge, Wu Dao-Xiong, Zhang Zhao-Fu, Li Bai-Kui. Properties of vacancies and N-doping in monolayer g-ZnO: First-principles calculation and molecular orbital theory analysisJ. Acta Physica Sinica, 2019, 68(24): 246301. DOI: 10.7498/aps.68.20191258