Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor

Liu Xu-Yang; Zhang He-Qiu; Li Bing-Bing; Liu Jun; Xue Dong-Yang; Wang Heng-Shan; Liang Hong-Wei; Xia Xiao-Chuan

doi:10.7498/aps.69.20190640

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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensorJ. Acta Physica Sinica, 2020, 69(4): 047201. DOI: 10.7498/aps.69.20190640

Citation:

Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensorJ. Acta Physica Sinica, 2020, 69(4): 047201. DOI: 10.7498/aps.69.20190640

Citation:

Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensorJ. Acta Physica Sinica, 2020, 69(4): 047201. DOI: 10.7498/aps.69.20190640