Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations

Zhang Jin-Feng; Xu Jia-Min; Ren Ze-Yang; He Qi; Xu Sheng-Rui; Zhang Chun-Fu; Zhang Jin-Cheng; Hao Yue

doi:10.7498/aps.69.20191013

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Zhang Jin-Feng, Xu Jia-Min, Ren Ze-Yang, He Qi, Xu Sheng-Rui, Zhang Chun-Fu, Zhang Jin-Cheng, Hao Yue. Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientationsJ. Acta Physica Sinica, 2020, 69(2): 028101. DOI: 10.7498/aps.69.20191013

Citation:

Zhang Jin-Feng, Xu Jia-Min, Ren Ze-Yang, He Qi, Xu Sheng-Rui, Zhang Chun-Fu, Zhang Jin-Cheng, Hao Yue. Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientationsJ. Acta Physica Sinica, 2020, 69(2): 028101. DOI: 10.7498/aps.69.20191013

Citation:

Zhang Jin-Feng, Xu Jia-Min, Ren Ze-Yang, He Qi, Xu Sheng-Rui, Zhang Chun-Fu, Zhang Jin-Cheng, Hao Yue. Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientationsJ. Acta Physica Sinica, 2020, 69(2): 028101. DOI: 10.7498/aps.69.20191013