Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistors

Dong Lei; Yang Jian-Qun; Zhen Zhao-Feng; Li Xing-Ji

doi:10.7498/aps.69.20191151

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Dong Lei, Yang Jian-Qun, Zhen Zhao-Feng, Li Xing-Ji. Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistorsJ. Acta Physica Sinica, 2020, 69(1): 018502. DOI: 10.7498/aps.69.20191151

Citation:

Dong Lei, Yang Jian-Qun, Zhen Zhao-Feng, Li Xing-Ji. Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistorsJ. Acta Physica Sinica, 2020, 69(1): 018502. DOI: 10.7498/aps.69.20191151

Citation:

Dong Lei, Yang Jian-Qun, Zhen Zhao-Feng, Li Xing-Ji. Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistorsJ. Acta Physica Sinica, 2020, 69(1): 018502. DOI: 10.7498/aps.69.20191151