Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices

Zhang Zhan-Gang; Lei Zhi-Feng; Tong Teng; Li Xiao-Hui; Wang Song-Lin; Liang Tian-Jiao; Xi Kai; Peng Chao; He Yu-Juan; Huang Yun; En Yun-Fei

doi:10.7498/aps.69.20191209

Search

x

Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei. Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devicesJ. Acta Physica Sinica, 2020, 69(5): 056101. DOI: 10.7498/aps.69.20191209

Citation:

Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei. Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devicesJ. Acta Physica Sinica, 2020, 69(5): 056101. DOI: 10.7498/aps.69.20191209

Citation:

Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei. Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devicesJ. Acta Physica Sinica, 2020, 69(5): 056101. DOI: 10.7498/aps.69.20191209