Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistor

Chen Fu; Tang Wen-Xin; Yu Guo-Hao; Zhang Li; Xu Kun; Zhang Bao-Shun

doi:10.7498/aps.69.20191850

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Chen Fu, Tang Wen-Xin, Yu Guo-Hao, Zhang Li, Xu Kun, Zhang Bao-Shun. Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2020, 69(9): 098501. DOI: 10.7498/aps.69.20191850

Citation:

Chen Fu, Tang Wen-Xin, Yu Guo-Hao, Zhang Li, Xu Kun, Zhang Bao-Shun. Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2020, 69(9): 098501. DOI: 10.7498/aps.69.20191850

Citation:

Chen Fu, Tang Wen-Xin, Yu Guo-Hao, Zhang Li, Xu Kun, Zhang Bao-Shun. Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2020, 69(9): 098501. DOI: 10.7498/aps.69.20191850