Effect of source-drain conduction in single-event transient on nanoscaled bulk fin field effect transistor

Lu Chao; Chen Wei; Luo Yin-Hong; Ding Li-Li; Wang Xun; Zhao Wen; Guo Xiao-Qiang; Li Sai

doi:10.7498/aps.69.20191896

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Lu Chao, Chen Wei, Luo Yin-Hong, Ding Li-Li, Wang Xun, Zhao Wen, Guo Xiao-Qiang, Li Sai. Effect of source-drain conduction in single-event transient on nanoscaled bulk fin field effect transistorJ. Acta Physica Sinica, 2020, 69(8): 086101. DOI: 10.7498/aps.69.20191896

Citation:

Lu Chao, Chen Wei, Luo Yin-Hong, Ding Li-Li, Wang Xun, Zhao Wen, Guo Xiao-Qiang, Li Sai. Effect of source-drain conduction in single-event transient on nanoscaled bulk fin field effect transistorJ. Acta Physica Sinica, 2020, 69(8): 086101. DOI: 10.7498/aps.69.20191896

Citation:

Lu Chao, Chen Wei, Luo Yin-Hong, Ding Li-Li, Wang Xun, Zhao Wen, Guo Xiao-Qiang, Li Sai. Effect of source-drain conduction in single-event transient on nanoscaled bulk fin field effect transistorJ. Acta Physica Sinica, 2020, 69(8): 086101. DOI: 10.7498/aps.69.20191896