The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances

Liu Nai-Zhang; Zhang Xue-Bing; Yao Ruo-He

doi:10.7498/aps.69.20191931

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Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He. The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitancesJ. Acta Physica Sinica, 2020, 69(7): 077302. DOI: 10.7498/aps.69.20191931

Citation:

Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He. The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitancesJ. Acta Physica Sinica, 2020, 69(7): 077302. DOI: 10.7498/aps.69.20191931

Citation:

Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He. The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitancesJ. Acta Physica Sinica, 2020, 69(7): 077302. DOI: 10.7498/aps.69.20191931