Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing

Luo Chang-Wei; Qiu Meng-Lin; Wang Guang-Fu; Wang Ting-Shun; Zhao Guo-Qiang; Hua Qing-Song

doi:10.7498/aps.69.20200029

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Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song. Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealingJ. Acta Physica Sinica, 2020, 69(10): 102901. DOI: 10.7498/aps.69.20200029

Citation:

Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song. Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealingJ. Acta Physica Sinica, 2020, 69(10): 102901. DOI: 10.7498/aps.69.20200029

Citation:

Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song. Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealingJ. Acta Physica Sinica, 2020, 69(10): 102901. DOI: 10.7498/aps.69.20200029