Single-event-upset effect simulation of HfO<sub>2</sub>-based ferroelectric field effect transistor read and write circuits

Li Hua-Mei; Hou Peng-Fei; Wang Jin-Bin; Song Hong-Jia; Zhong Xiang-Li

doi:10.7498/aps.69.20200123

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Li Hua-Mei, Hou Peng-Fei, Wang Jin-Bin, Song Hong-Jia, Zhong Xiang-Li. Single-event-upset effect simulation of HfO2-based ferroelectric field effect transistor read and write circuitsJ. Acta Physica Sinica, 2020, 69(9): 098502. DOI: 10.7498/aps.69.20200123

Citation:

Li Hua-Mei, Hou Peng-Fei, Wang Jin-Bin, Song Hong-Jia, Zhong Xiang-Li. Single-event-upset effect simulation of HfO2-based ferroelectric field effect transistor read and write circuitsJ. Acta Physica Sinica, 2020, 69(9): 098502. DOI: 10.7498/aps.69.20200123

Citation:

Li Hua-Mei, Hou Peng-Fei, Wang Jin-Bin, Song Hong-Jia, Zhong Xiang-Li. Single-event-upset effect simulation of HfO2-based ferroelectric field effect transistor read and write circuitsJ. Acta Physica Sinica, 2020, 69(9): 098502. DOI: 10.7498/aps.69.20200123