A compact model of shield-gate trench MOSFET based on BSIM4

Jiang Yi-Xun; Qiao Ming; Gao Wen-Ming; He Xiao-Dong; Feng Jun-Bo; Zhang Sen; Zhang Bo

doi:10.7498/aps.69.20200359

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Jiang Yi-Xun, Qiao Ming, Gao Wen-Ming, He Xiao-Dong, Feng Jun-Bo, Zhang Sen, Zhang Bo. A compact model of shield-gate trench MOSFET based on BSIM4J. Acta Physica Sinica, 2020, 69(17): 177103. DOI: 10.7498/aps.69.20200359

Citation:

Jiang Yi-Xun, Qiao Ming, Gao Wen-Ming, He Xiao-Dong, Feng Jun-Bo, Zhang Sen, Zhang Bo. A compact model of shield-gate trench MOSFET based on BSIM4J. Acta Physica Sinica, 2020, 69(17): 177103. DOI: 10.7498/aps.69.20200359

Citation:

Jiang Yi-Xun, Qiao Ming, Gao Wen-Ming, He Xiao-Dong, Feng Jun-Bo, Zhang Sen, Zhang Bo. A compact model of shield-gate trench MOSFET based on BSIM4J. Acta Physica Sinica, 2020, 69(17): 177103. DOI: 10.7498/aps.69.20200359