Long Ze, Xia Xiao-Chuan, Shi Jian-Jun, Liu Jun, Geng Xin-Lei, Zhang He-Zhi, Liang Hong-Wei. Temperature dependent characteristics of Ni/Au vertical Schottky diode based on mechanically exfoliated beta-Ga2O3 single crystalJ. Acta Physica Sinica, 2020, 69(13): 138501. DOI: 10.7498/aps.69.20200424
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Citation:
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Long Ze, Xia Xiao-Chuan, Shi Jian-Jun, Liu Jun, Geng Xin-Lei, Zhang He-Zhi, Liang Hong-Wei. Temperature dependent characteristics of Ni/Au vertical Schottky diode based on mechanically exfoliated beta-Ga2O3 single crystalJ. Acta Physica Sinica, 2020, 69(13): 138501. DOI: 10.7498/aps.69.20200424
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Long Ze, Xia Xiao-Chuan, Shi Jian-Jun, Liu Jun, Geng Xin-Lei, Zhang He-Zhi, Liang Hong-Wei. Temperature dependent characteristics of Ni/Au vertical Schottky diode based on mechanically exfoliated beta-Ga2O3 single crystalJ. Acta Physica Sinica, 2020, 69(13): 138501. DOI: 10.7498/aps.69.20200424
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Citation:
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Long Ze, Xia Xiao-Chuan, Shi Jian-Jun, Liu Jun, Geng Xin-Lei, Zhang He-Zhi, Liang Hong-Wei. Temperature dependent characteristics of Ni/Au vertical Schottky diode based on mechanically exfoliated beta-Ga2O3 single crystalJ. Acta Physica Sinica, 2020, 69(13): 138501. DOI: 10.7498/aps.69.20200424
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