Thermal annealing effects of InGaAs (1.0 eV) and InGaAs (0.7 eV) sub-cells of inverted metamorphic four junction (IMM4J) solar cells under 1 MeV electron irradiation

Zhang Yan-Qing; Qi Chun-Hua; Zhou Jia-Ming; Liu Chao-Ming; Ma Guo-Liang; Tsai Hsu-Sheng; Wang Tian-Qi; Huo Ming-Xue

doi:10.7498/aps.69.20200557

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Zhang Yan-Qing, Qi Chun-Hua, Zhou Jia-Ming, Liu Chao-Ming, Ma Guo-Liang, Tsai Hsu-Sheng, Wang Tian-Qi, Huo Ming-Xue. Thermal annealing effects of InGaAs (1.0 eV) and InGaAs (0.7 eV) sub-cells of inverted metamorphic four junction (IMM4J) solar cells under 1 MeV electron irradiationJ. Acta Physica Sinica, 2020, 69(22): 228802. DOI: 10.7498/aps.69.20200557

Citation:

Zhang Yan-Qing, Qi Chun-Hua, Zhou Jia-Ming, Liu Chao-Ming, Ma Guo-Liang, Tsai Hsu-Sheng, Wang Tian-Qi, Huo Ming-Xue. Thermal annealing effects of InGaAs (1.0 eV) and InGaAs (0.7 eV) sub-cells of inverted metamorphic four junction (IMM4J) solar cells under 1 MeV electron irradiationJ. Acta Physica Sinica, 2020, 69(22): 228802. DOI: 10.7498/aps.69.20200557

Citation:

Zhang Yan-Qing, Qi Chun-Hua, Zhou Jia-Ming, Liu Chao-Ming, Ma Guo-Liang, Tsai Hsu-Sheng, Wang Tian-Qi, Huo Ming-Xue. Thermal annealing effects of InGaAs (1.0 eV) and InGaAs (0.7 eV) sub-cells of inverted metamorphic four junction (IMM4J) solar cells under 1 MeV electron irradiationJ. Acta Physica Sinica, 2020, 69(22): 228802. DOI: 10.7498/aps.69.20200557