Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian. Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistorJ. Acta Physica Sinica, 2020, 69(20): 207301. DOI: 10.7498/aps.69.20200714
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Citation:
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Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian. Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistorJ. Acta Physica Sinica, 2020, 69(20): 207301. DOI: 10.7498/aps.69.20200714
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Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian. Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistorJ. Acta Physica Sinica, 2020, 69(20): 207301. DOI: 10.7498/aps.69.20200714
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Citation:
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Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian. Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistorJ. Acta Physica Sinica, 2020, 69(20): 207301. DOI: 10.7498/aps.69.20200714
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