Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays

Chen Rui; Liang Ya-Nan; Han Jian-Wei; Wang Xuan; Yang Han; Chen Qian; Yuan Run-Jie; Ma Ying-Qi; Shangguan Shi-Peng

doi:10.7498/aps.70.20202028

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Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng. Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma raysJ. Acta Physica Sinica, 2021, 70(11): 116102. DOI: 10.7498/aps.70.20202028

Citation:

Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng. Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma raysJ. Acta Physica Sinica, 2021, 70(11): 116102. DOI: 10.7498/aps.70.20202028

Citation:

Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng. Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma raysJ. Acta Physica Sinica, 2021, 70(11): 116102. DOI: 10.7498/aps.70.20202028