Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environment

Gou Shi-Long; Ma Wu-Ying; Yao Zhi-Bin; He Bao-Ping; Sheng Jiang-Kun; Xue Yuan-Yuan; Pan Chen

doi:10.7498/aps.70.20210351

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Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen. Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environmentJ. Acta Physica Sinica, 2021, 70(15): 156101. DOI: 10.7498/aps.70.20210351

Citation:

Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen. Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environmentJ. Acta Physica Sinica, 2021, 70(15): 156101. DOI: 10.7498/aps.70.20210351

Citation:

Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen. Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environmentJ. Acta Physica Sinica, 2021, 70(15): 156101. DOI: 10.7498/aps.70.20210351