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中国物理学会期刊
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Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei. Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301. DOI: 10.7498/aps.70.20210700
Citation: Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei. Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301. DOI: 10.7498/aps.70.20210700
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Gate capacitance model of AlGaN/GaN high electron mobility transistor

Acta Phys. Sin., 2021, 70(21): 217301.
DOI: 10.7498/aps.70.20210700
CSTR: 32037.14.aps.70.20210700
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