Zhou Shu-Xing, Fang Ren-Feng, Wei Yan-Feng, Chen Chuan-Liang, Cao Wen-Yu, Zhang Xin, Ai Li-Kun, Li Yu-Dong, Guo Qi. Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance abilityJ. Acta Physica Sinica, 2022, 71(3): 037202. DOI: 10.7498/aps.71.20211265
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Citation:
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Zhou Shu-Xing, Fang Ren-Feng, Wei Yan-Feng, Chen Chuan-Liang, Cao Wen-Yu, Zhang Xin, Ai Li-Kun, Li Yu-Dong, Guo Qi. Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance abilityJ. Acta Physica Sinica, 2022, 71(3): 037202. DOI: 10.7498/aps.71.20211265
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Zhou Shu-Xing, Fang Ren-Feng, Wei Yan-Feng, Chen Chuan-Liang, Cao Wen-Yu, Zhang Xin, Ai Li-Kun, Li Yu-Dong, Guo Qi. Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance abilityJ. Acta Physica Sinica, 2022, 71(3): 037202. DOI: 10.7498/aps.71.20211265
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Citation:
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Zhou Shu-Xing, Fang Ren-Feng, Wei Yan-Feng, Chen Chuan-Liang, Cao Wen-Yu, Zhang Xin, Ai Li-Kun, Li Yu-Dong, Guo Qi. Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance abilityJ. Acta Physica Sinica, 2022, 71(3): 037202. DOI: 10.7498/aps.71.20211265
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